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| NTE2322 Silicon PNP Transistor Quad, General Purpose Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA Total Device Dissipation (TA = +25C, Each Transistor), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.65W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.5mW/C Total Device Dissipation (TA = +25C, Total Device), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.9W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19mW/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +125C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +125C Thermal Reistance, Junction-to-Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 66C/W Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter OFF Characteristics Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current ON Characteristics (Note 1) DC Current Gain hFE VCE = 10V, IC = 10mA VCE = 10V, IC = 150mA VCE = 10V, IC = 300mA Collector-Emitter Saturation Voltage VCE(sat) VBE(sat) IC = 150mA, IB = 15mA IC = 300mA, IB = 30mA Base-Emitter Saturation Voltage IC = 150mA, IB = 15mA IC = 300mA, IB = 30mA 75 100 30 - - - - - - - - - - - - - - 0.4 1.6 1.5 2.6 V V V V V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO IC = 10mA, IB = 0, Note 1 IC = 10A, IE = 0 IE = 10A, IC = 0 VCB = 30V, IE = 0 VEB = 3V, IE = 0 40 60 5 - - - - - - - - - - 50 50 V V V nA nA Symbol Test Conditions Min Typ Max Unit Note 1. Pulse test: Pulse Width 300s, Duty Cycle 2%. Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified) Parameter Small-Signal Characteristics Current Gain-Bandwidth Product Output Capacitance Input Capacitance fT Cobo Cibo VCE = 20V, IC = 50mA, f = 100MHz VCB = 10V, IE = 0, f = 1MHz VEB = 2V, IC = 0, f = 1MHz 200 - - - - - - 8 30 MHz pF pF Symbol Test Conditions Min Typ Max Unit Pin Connection Diagram Collector 1 Base 2 Emitter 3 N.C. 4 Emitter 5 Base 6 Collector 7 14 Collector 13 Base 12 Emitter 11 N.C. 10 Emitter 9 8 Base Collector 14 8 1 7 .785 (19.95) Max .200 (5.08) Max .300 (7.62) .100 (2.45) .600 (15.24) .099 (2.5) Min |
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